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A. TATAROĞLU1, Ş. ALTINDAL1, U. AYDEMİR1,* , H. USLU1
The aim of this work is to experimentally investigate the effect of series resistance (Rs) on current-voltage (I-V) characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures. The parameter Rs, the ideality factor (n) and barrier height ( B) are determined by performing different plots from the experimental forward bias I-V measurements. The current-voltage characteristics of MFM structures were measured at room temperature. The values of n and B were found to be 1.458 and 1.186 eV, respectively. The structure shows non-ideal I-V behaviour with ideality factor greater than unity. This behavior arises from the series resistance and the presence of an interfacial layer formed during the surface preparation. In addition, the values of Rs were determined using Cheung’s method. The effect of the series resistance for the device was not ignored and the obtained values are lower than the equivalent values obtained previously without considering effect of the presence of interfacial layer. The I-V characteristics confirmed that the distribution of Rs and interfacial layer are important parameters that influence the electrical characteristics of structures..
MFM structures, I-V characteristics, Ideality factor, Barrier height, Interface states.
A. TATAROĞLU, Ş. ALTINDAL, U. AYDEMİR, H. USLU, The effects of series resistance on the forward bias I-V characteristics in Au/Bi4Ti3O12/SnO2 (MFM) structures, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.616-619 (2010).
Submitted at: April 2, 2010
Accepted at: May 20, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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