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The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films

HUIYING HAO1,* , JIE XING1, WEIMIN LI1, XIANGBO ZENG2, GUANGLIN KONG2, XIANBO LIAO2

Affiliation

  1. School of Materials Science and Technology，China University of Geosciences, Beijing, 100083, P. R. China
  2. Key Laboratory of Semiconductor Materials Science Institute of Semiconductors, Chinese Academy of Sciences P. O. Box 912, Beijing 100083, P. R. China

Abstract

A series of diphasic nanocrystalline silicon thin films was prepared by PECVD technique. The effects of substrate temperature on the properties of the films were investigated. The results show that crystalline volume fraction and grain size in the films increase with increasing Ts. The improved structures lead to higher mobility lifetime product and better stability. While the photosensitivity decreases due to the formation of a conductive percolation channel or the shift of Femi-level in the diphasic films. In our case, the diphasic nanocrystalline silicon thin film deposited at 200 0C can gain both the fine photoelectrical properties and high stability..

Keywords

Nanocrystalline silicon thin films, Structure, Photoelectrical properties, Stability.

Citation

HUIYING HAO, JIE XING, WEIMIN LI, XIANGBO ZENG, GUANGLIN KONG, XIANBO LIAO, The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 2, February 2011, pp.112-115 (2011).

Submitted at: Jan. 8, 2011

Accepted at: Feb. 17, 2011