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S. S. TNEH1,* , Z. HASSAN1, K. G. SAW2, F. K. YAM1, H. ABU HASSAN1
ZnO thin films were synthesized using the “bottom-up” method. The surface morphology of the ZnO films was determined by using atomic force microscopy. The resistivity was characterized by four point probe measurement. From Raman scattering measurement, the peak A1(LO) at 576 cm-1 is absent for sample with longer oxidation duration, which may be due to the interstitial Zn in the ZnO crystal. Infrared absorbance analysis suggested the presence of Zn −OH bond in the translation and deformation mode in the range of 510-570 cm-1 and 950-1020 cm-1 respectively.
ZnO, Thin films, Raman measurement, Infrared spectroscopy, Resistivity.
S. S. TNEH, Z. HASSAN, K. G. SAW, F. K. YAM, H. ABU HASSAN, The electrical and vibrational characteristics of ZnO synthesized using the “bottom-up” growth method, Optoelectronics and Advanced Materials - Rapid Communications, 4, 12, December 2010, pp.2068-2071 (2010).
Submitted at: Aug. 28, 2010
Accepted at: Nov. 29, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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