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M. AHMETOGLU (AFRAİLOV)1,* , A. KIRSOY1, A. ASİMOV1, B. KUCUR1
We fabricated the Au/Meh-PPV:PCBM/n-type GaAs Schottky barrier diodes (SBDs). Then we investigated Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode at room temperature. MEH-PPV:PCBM (in a mass ratio 1:4) used as interfacial layer between metal and semiconductor layers. Here, MEH-PPV is poly [2-methoxy-5-(ethylhexyloxy)- 1,4-phenylenevinylene] and PCBM is [6,6]-phenyl-61C-butric acid methyl ester). SBD parameters such as ideality factor, barrier height and series resistance were obtained from I-V and C-V measurements. Also, Cheung functions and Norde Method were used to evaluate the I-V characteristics and to determine the characteristic parameters of the Schottky diode. The diode parameters such as ideality factor, barrier heights and series resistance were found as 4.39-4.54 and 0.57-0.63 eV and 51-53 Ω respectively. Also the interface states energy distribution of the diode was determined and found as 1.09 x 1012 eV-1 cm-2 at (Ec-0.352) eV to 2.94 x 1011 eV-1 cm-2 at (Ec-0.436) eV..
Schottky barrier diode, Series resistance, Ideality factor, Conducting polymers.
M. AHMETOGLU (AFRAİLOV), A. KIRSOY, A. ASİMOV, B. KUCUR, The electrical properties of Au/MEH-PPV:PCBM/n-type GaAs Schottky barrier diode, Optoelectronics and Advanced Materials - Rapid Communications, 10, 11-12, November–December 2016, pp.825-830 (2016).
Submitted at: Dec. 12, 2014
Accepted at: Nov. 25, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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