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Ş. KARATAŞ1,* , A. A. AL-GHAMDI2, FATEN AL-HAZMI2, OMAR A. AL-HARTOMY2,3, FARID EL-TANTAWY4, F. YAKUPHANOGLU2,5
The nanocluster CdO thin film was grown on p-type silicon substrate by sol-gel method. The structural properties of grown CdO film on Si substrate were investigated by atomic force microscopy (AFM). AFM images indicate that the CdO film is consisted of the clusters formed with coming together of the nano-particles. The heterostructure diode, formed from two semiconductor layers having different optical band gap, n-CdO/p-Si is prepared. The electrical properties such as barrier height, ideality factor, interface states density and series resistance of the n-CdO/p-Si heterojunction diode were determined from the current–voltage (I-V) measurements. The values of barrier height and series resistance obtained from Cheung and Norde functions of the heterojunction diode were compared with each other. The interface state density (NSS) as a function of energy distribution (ESS- EV) was extracted from the forward-bias I–V measurements by taking into account the bias b) and series resistance (RS). The density of the interface state was found to vary from 7.52×1012 eV−1 cm−2 to 5.07×1012 eV−1 cm−2..
Heterojunction semiconductors, Oxides, Nanostructures, I-V and C-V measurements.
Ş. KARATAŞ, A. A. AL-GHAMDI, FATEN AL-HAZMI, OMAR A. AL-HARTOMY, FARID EL-TANTAWY, F. YAKUPHANOGLU, The electrical properties of nanocluster-CdO/p-type silicon heterojunction structure at room temperature, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.965-970 (2012).
Submitted at: May 7, 2012
Accepted at: Oct. 30, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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