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D. KORUCU1,* , Ş. ALTINDAL1, T.S. MAMMADOV2, S. ÖZÇELIK1
The frequency and bias voltage dependent of the capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Sn/p-InP Schottky barrier diodes (SBDs) were investigated in the frequency range of 100 kHz-7 MHz at room temperature. Experimental data shows that the measured capacitance (Cm) and conductance (Gm/w) increase with decreasing frequency due to a continuous distribution of (Nss) and the effect of series resistance (Rs). These changes in the Cm and Gm/w especially are found noticeable at low frequencies. The variation of the Rs and Nss for the Sn/p-InP SBD obtained from Cm-V and Gm/ω-V characteristics using Nicollian and Goetzberger and Hill’s methods, respectivelly. The distribution profile of Rs-V gives two peaks in the inversion and accumulation region, respectively, at low frequencies and these peaks disappear with increasing frequencies. Also, the energy-density distribution profile of interface states exponentially decreases with increasing frequency. Experimental results confirm that the values of Nss and Rs of the Sn/pInP SBDs are important parameters which strongly influence the Cm-V and Gm/ω-V measurements.
Sn/p-InP SBDs, Frequency and voltage dependence, Interface states, Series resistance.
D. KORUCU, Ş. ALTINDAL, T.S. MAMMADOV, S. ÖZÇELIK, The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs), Optoelectronics and Advanced Materials - Rapid Communications, 2, 9, September 2008, pp.525-529 (2008).
Submitted at: June 25, 2008
Accepted at: Aug. 28, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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