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BO ZHANG1,2,* , YUN TIAN2, JIANXIN ZHANG1,2, WEI CAI1
The fluorine doped tin oxide films were prepared using hydrofluoric acid as the fluorine precursor. The effect of hydrofluoric acid concentration on the film orientation, morphology and electrical parameters were discussed. The FTIR indicates that the fluorine ions prefer to substitute the oxygen ions in the group of O-Sn-O. While beyond a certain doping level, fluorine ions start to occupy interstitial sites, which has a negative effect on carrier concentration. The FTIR also shows the increase of the disorder of SnO2 films with increasing fluorine doping. The main scattering centers of carriers are the impurity ions.
Tin oxide films, Spray pyrolysis, Substitution of fluorine for oxygen, Carrier.
BO ZHANG, YUN TIAN, JIANXIN ZHANG, WEI CAI, The FTIR studies on the structural and electrical properties of SnO2:F films as a function of hydrofluoric acid concentration, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1158-1162 (2010).
Submitted at: July 20, 2010
Accepted at: Aug. 12, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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