Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
L. S. CHUAH1,* , Z. HASSAN1, H. ABU HASSAN1
GaN-based materials received great deal of attention because of the potential applications for optoelectronic devices operating in the whole visible spectral range and in electronic devices such as high temperature, high power, and high frequency transistor. The III-nitrides form a continuous alloy system with direct band gap ranging from 6.2 eV (AlN) to 0.7 eV (InN) with 3.4 eV for GaN. Consequently, the growth and physics of GaN-based materials have attracted tremendous scientific attention. This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on (111) Si substrate at 850 ºC under UHV conditions for 15, 30, and 45 minutes. The films were characterized by high-resolution x-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD phase analysis of (0002) plane of GaN exhibits two intense and sharp peaks, namely Si(111) and AlN(0002) diffraction peaks, at 28.4° and 36.1° respectively. Micro-Raman results show that all the allowed Raman modes of AlN and Si are visible.
AlN, Plasma-assisted MBE, Thin films, Micro-Raman spectroscopy.
L. S. CHUAH, Z. HASSAN, H. ABU HASSAN, The growth of AlN thin films on Si (111) substrate by plasma-assisted molecular beam epitaxy, Optoelectronics and Advanced Materials - Rapid Communications, 2, 3, March 2008, pp.137-139 (2008).
Submitted at: Feb. 11, 2008
Accepted at: March 16, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.