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A. JITARIU1,2,* , H. S. GORIPATI1, N. LUPU1, H. CHIRIAC1
In this work, spin-valves with typical multilayer structure of Ta (10 nm) / Ru (x nm) / CoFe (3 nm) / IrMn (20 nm) / CoFe (3 nm) / Cu (3 nm) / CoFe (3 nm) / NiFe (5 nm) / Ta (5 nm) were fabricated with varying Ru thickness. In order to optimize the spin-valve magnetoresistive properties for sensors applications, the influence of the Ru underlayer thickness on the magnetoresistance (MR) ratio and the coercive field of the free layer was studied. It was shown that by using a Ru underlayer the MR ratio decreases, but it lowers the coercive field of the free layer, which is more advantageous for low-field sensor applications. By using the optimized thickness of the underlayer, an optimal MR of 3.45 % and a coercive field of 9 Oe were obtained..
Spin-valve, Giant magnetoresistance, Underlayer.
A. JITARIU, H. S. GORIPATI, N. LUPU, H. CHIRIAC, The influence of Ru underlayer on magnetoresistive properties in bottom pinned spin-valves, Optoelectronics and Advanced Materials - Rapid Communications, 10, 1-2, January-February 2016, pp.65-67 (2016).
Submitted at: Sept. 1, 2015
Accepted at: Feb. 10, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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