Abstract
A model is provided to design the junction of a straight and bent waveguide, in which, a full vectorial finite difference model
(FVFD), specifically suited for high index contrast and smaller size waveguides, for example, a waveguide in the silicon-oninsulator
(SOI) technology, is used to obtain the electric and magnetic component of the field in a straight or bent waveguide.
As a validation, a straight and bent waveguides in SOI technology are simulated using this model, the results show that the
connection losses of junctions can be reduced using offsets. Also, experiments are implemented to testify the results,
several typical width of SOI waveguides are fabricated to decide the optimum width, the bent losses for a bent waveguide
with a radius of 2 m are about 0.025 dB /900 with the optimum width of 450nm. And, the junction of a straight and bent
waveguide with a radius of 2 m are fabricated using 25 nm offset, the connection losses of the SOI waveguide junctions
are reduced by about 20 percents, compared with the junctions without offsets..
Keywords
Connection losses of junctions, Full vectorial finite difference model, Optimum width.
Citation
YUAN LI, ZHENGWEN XIE, LIHUA LEI, GUOFANG FAN, The junction of the straight and bent waveguide with small radiuses, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1178-1180 (2012).
Submitted at: July 20, 2012
Accepted at: Oct. 30, 2012