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The preparation, electrical and optical properties of indium doped ZnO conductive nanoparticles

YUAN-QING LI1,2,* , YONG KANG1, WANG-JING MA3, HAI-QIN WANG4, ZHANG JIAN-MIN1

Affiliation

  1. School of Materials Science and Engineering,Shijiazhuang Railway Institute, Shijiazhuang 050043, China
  2. School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 639798, Singapore
  3. Technical Institute of Physics and Chemistry, Chinese Academy of Science, Beijing 100190, China
  4. Zhengding No. 3 Middle School, Shijiazhuang 05080, China

Abstract

In this paper, In-doped ZnO (IZO) nanoparticles were prepared by the solvothermal method.The structure properties of the as-prepared IZO nanoparticles were studied in detail using X-ray diffractometer (XRD) and transmission electronic microscopy (TEM), Structural characterization indicates that the IZO nanoparticles were spherical shape with the wurtzite structure and IZO-5 nanoparticles had average particle size of 60 nm. In addition, the effects of indium doping level and H2 reduction conditions on the conductive properties of the prepared IZO nanoparticles were studied. The most optimal conductivity of IZO nanoparticles was achieved with 5 mol% indium doping. Compared with pure ZnO as prepared, before and after H2 reduction treatment, the resistance of IZO decreased more than two and five orders, respectively. Furthermore, the IZO nanoparticles show superior optical transparent in the visible light region. Consequently, the prepared IZO nanoparticles are promising as transparent conductive filler due to the excellent electrical conductive and optical transparent properties..

Keywords

IZO, Nanoparticles, Solvothermal method, Electrical conductivity, Reduction.

Citation

YUAN-QING LI, YONG KANG, WANG-JING MA, HAI-QIN WANG, ZHANG JIAN-MIN, The preparation, electrical and optical properties of indium doped ZnO conductive nanoparticles, Optoelectronics and Advanced Materials - Rapid Communications, 4, 2, February 2010, pp.211-214 (2010).

Submitted at: Jan. 16, 2010

Accepted at: Feb. 2, 2010