Abstract
In this paper, In-doped ZnO (IZO) nanoparticles were prepared by the solvothermal method.The structure properties of the as-prepared IZO nanoparticles were studied in detail using X-ray diffractometer (XRD) and transmission electronic microscopy (TEM), Structural characterization indicates that the IZO nanoparticles were spherical shape with the wurtzite structure and IZO-5 nanoparticles had average particle size of 60 nm. In addition, the effects of indium doping level and H2 reduction conditions on the conductive properties of the prepared IZO nanoparticles were studied. The most optimal conductivity of IZO nanoparticles was achieved with 5 mol% indium doping. Compared with pure ZnO as prepared, before and after H2 reduction treatment, the resistance of IZO decreased more than two and five orders, respectively. Furthermore, the IZO nanoparticles show superior optical transparent in the visible light region. Consequently, the prepared IZO nanoparticles are promising as transparent conductive filler due to the excellent electrical conductive and optical transparent properties..
Keywords
IZO, Nanoparticles, Solvothermal method, Electrical conductivity, Reduction.
Citation
YUAN-QING LI, YONG KANG, WANG-JING MA, HAI-QIN WANG, ZHANG JIAN-MIN, The preparation, electrical and optical properties of indium doped ZnO conductive nanoparticles, Optoelectronics and Advanced Materials - Rapid Communications, 4, 2, February 2010, pp.211-214 (2010).
Submitted at: Jan. 16, 2010
Accepted at: Feb. 2, 2010