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R. REN1,* , YIJING REN1, XUAN LI1
We investigated the Raman scattering spectru m s of difference residual stress and thickness of diamond/Si films. The spin-orbital dynamics is caused by disordered lattice coupling and electron phonons in diamond/Si . The diamond films were prepared on a Si substrate by MPCVD with methyl hydrogen gas m ixture. The Raman scattering spectrum of diamond/ Si(100) hetero junction was found as a function of crystal size, orientation, and film thickness. A sharp peak at 1360cm 1 is of D graphite sp2, while the broad peak 1550 cm 1 of a broad band mode G, which corresponds to disordered sp2 hybridization. The transfer of diamond sp2 content extracted from C=C peak and converted to the sp3 spin related effect. The diamond/ Si(100) density state shows spin related couple of sp3 , p and d orbital hybridization..
Diamond films, Nitrogen vacancy, Spin-orbit dynamics, Raman shift.
R. REN, YIJING REN, XUAN LI, The spin orbital dynamics properties of vacancy diamond films using enhanced Raman scattering spectroscopy, Optoelectronics and Advanced Materials - Rapid Communications, 11, 11-12, November-December 2017, pp.716-720 (2017).
Submitted at: April 13, 2017
Accepted at: Nov. 28, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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