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H. A. MOHAMED1,* , Y. A. TAYA1
In this work the optical and recombination losses for CuInGaSe (CIGS) thin-film solar cells have been theoretically studied. The optical losses have been studied on the basis of the thickness of frontal charge-collecting layer (ZnO:Al) effect. The recombination losses have been studied as a function of CIGS doping (NA) and electron lifetime (τn). The optical and recombination losses effect on short circuit current density, (Jsc), the open circuit voltage (Voc), the fill factor (FF) and conversion efficiency (η) of thin-film solar cells based on n-CdS/p-CIGS has been investigated. It was found that the film with the transparent conducting layer 100 nm thickness is suitable to give the highest Jsc value of about 29.5 mA/cm2 and the lowest value of optical losses of about 26%. The CIGS doping has a significant effect on the values and behavior of the internal efficiency. There is a weak effect of the relaxation time on the efficiency of this solar cell as it increases from 18.7% to 19.1% with increase the lifetime from the value of 10 nS to 80 nS, respectively.
CIGS, Solar cell, Optical loss, Recombination loss and the efficiency.
H. A. MOHAMED, Y. A. TAYA, Theoretical analysis of the effect of doping and minority charge carrier life time in CIGS solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 15, 3-4, March-April 2021, pp.157-163 (2021).
Submitted at: July 20, 2020
Accepted at: April 7, 2021
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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