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Thermal annealing dependence of Ni/Ag ohmic contact in oxygen ambience on GaN PN-junction diode

M. Z. MOHD YUSOFF1,* , Z. HASSAN1, C. W. CHIN1, H. ABU HASSAN1

Affiliation

  1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Abstract

In this paper, we investigated growth of GaN pn-junction layers on silicon (111) by plasma assisted molecular beam epitaxy (PA-MBE) system and the effect of thermal annealing of Ni/Ag contacts on the sample. The full width at half maximum (FWHM) was measured as 0.34o, indicating a good quality layer of sample. The structural evolution and temperature dependence of the current of Ni/Ag contacts on GaN pn-junction at various annealing were investigated by scanning electron microscopy (SEM) and current-voltage (I-V) measurements. The temperature dependence of the current may be attributed to changes of the surface morphology of Ni/Ag films on the surface. SEM results indicated the degradation of Ni/Ag contacts on GaN pn-junction above 800oC.

Keywords

GaN/Si, PN-junction, III-nitride.

Citation

M. Z. MOHD YUSOFF, Z. HASSAN, C. W. CHIN, H. ABU HASSAN, Thermal annealing dependence of Ni/Ag ohmic contact in oxygen ambience on GaN PN-junction diode, Optoelectronics and Advanced Materials - Rapid Communications, 4, 6, June 2010, pp.863-866 (2010).

Submitted at: May 21, 2010

Accepted at: June 16, 2010