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H. Y. HE1,*
CuS films were fabricated by a chemical bath deposition process in an aqueous solution of cupric acetate, thiourea, and sodium ethylenediamine tetraacetate (EDTA-2Na) at different temperatures. The films were characterized by X-ray diffraction, atomic force microscopy, UV-vis spectrophotometry and luminescent spectrophotometry. The effects of deposition temperature and reaction time on the thickness, transmittance and band gap, and luminescence of the films were investigated. The deposition rate first increased with increase of temperature up to 75 ℃ and then was decreased at 100 ℃. The band gap of the films ranged from 2.41-2.72 eV that decreased with increased deposition temperature and deposition time, except for the films deposited at 100 ℃ which band gap first decreased and then increased with the time. We believe this simple chemical bath deposition technique can be further extended to the rapid fabrication of other semiconductor films..
CuS, Film, Deposition, Temperature effect, Transmittance, Bandgap.
H. Y. HE, Thermal-assisted chemical bath deposition and optical property of CuS films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 12, December 2011, pp.1301-1306 (2011).
Submitted at: Nov. 13, 2011
Accepted at: Nov. 24, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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