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Y . NIU1, NIU, Z . XIONG1,* , G LUO1
To achieve ultra high power Light Emitting Diode(LED), we developed a thermal simulation to design and fabricate a vertical structure LED based on Si substrate with a large size of 3 mm × 3 mm chip. It was found that the luminous flux of packaged LED increases with the increase of driving current and reaches 1284 lm at 5A. Moreover, the thermal resistance and junction temperature are 1 .9 9 °C /W and 6 6.96 °C respectively, which are consistent with the sim ulated results. Due to its excellent optical and thermal properties, the vertical GaN/Si LED has important applications in special high brightness fields..
V ertical GaN/Si LED , Large size chip, Luminous Thermal resistance and junction temperature.
Y . NIU, NIU, Z . XIONG, G LUO, Thermal simulation and packaging of vertical GaN/Si LED with large size chip, Optoelectronics and Advanced Materials - Rapid Communications, 13, 1-2, January-February 2019, pp.69-72 (2019).
Submitted at: Feb. 3, 2018
Accepted at: Feb. 12, 2019
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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