Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
Y . NIU1, NIU, Z . XIONG1,* , G LUO1
To achieve ultra high power Light Emitting Diode(LED), we developed a thermal simulation to design and fabricate a vertical structure LED based on Si substrate with a large size of 3 mm × 3 mm chip. It was found that the luminous flux of packaged LED increases with the increase of driving current and reaches 1284 lm at 5A. Moreover, the thermal resistance and junction temperature are 1 .9 9 °C /W and 6 6.96 °C respectively, which are consistent with the sim ulated results. Due to its excellent optical and thermal properties, the vertical GaN/Si LED has important applications in special high brightness fields..
V ertical GaN/Si LED , Large size chip, Luminous Thermal resistance and junction temperature.
Y . NIU, NIU, Z . XIONG, G LUO, Thermal simulation and packaging of vertical GaN/Si LED with large size chip, Optoelectronics and Advanced Materials - Rapid Communications, 13, 1-2, January-February 2019, pp.69-72 (2019).
Submitted at: Feb. 3, 2018
Accepted at: Feb. 12, 2019
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.