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LIANG ZHAO1, ZUOXING GUO1, LI LIU1, XINGYOU CHEN2, YI GU2, LEI ZHAO1,*
InGaAs photodetector with linearly graded InxAl1-xAs buffer and digital graded superlattices (DGSLs) was studied by high-resolution transmission electron microscopy (HRTEM). The upgrade of the properties of photodetector has been verified in structure. Linearly graded InxAl1-xAs buffer layer effectively restrained the motion of threading dislocations (TDs). The cross-section high-resolution images proved the digital graded superlattice markedly decreased the TDs density in absorption layer. Furthermore, the DGSL structures reduced the conduction band discontinuity in heterojunction interface..
In0.83Ga0.17As photodetector, Digital graded superlattices, Dislocations, TEM.
LIANG ZHAO, ZUOXING GUO, LI LIU, XINGYOU CHEN, YI GU, LEI ZHAO, Transmission electron microscopy study of In0.83Ga0.17As photodetectors with linearly graded InxAl1-xAs buffer and digital graded superlattices, Optoelectronics and Advanced Materials - Rapid Communications, 11, 3-4, March-April 2017, pp.229-231 (2017).
Submitted at: April 19, 2016
Accepted at: April 6, 2017
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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