"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Tri-state switching behavior in a GaAs/InGaAs barrier structure

WEN-CHUNG CHANG1,* , MING-JU YANG1, KAO-FENG YARN2, WIN-JET LUO3, CHIH-YUNG WANG1

Affiliation

  1. Department of Electronic Engineering, Southern Taiwan University, Tainan, Taiwan 710, ROC
  2. Department of Electronic Engineering, Far East University, Tainan, Taiwan 744, ROC
  3. Department of Refrigeration, Air Conditioning and Energy Engineering, National Chin-Yi University of Technology, Taichung, Taiwan 411, ROC

Abstract

In this study, a new GaAs/InGaAs potential barrier switching device combined with a p-n hole injector is fabricated and demonstrated. Two GaAs/InGaAs barriers are employed to provide potential barriers for electron thermionic emission and hole confinement. While applying a sufficient bias voltage to this device, a double S-shaped negative differential resistance (NDR) phenomenon with nearly equal switching voltage difference is appeared at room temperature. This unique NDR property can be introduced to triple stable regions into the device circuit design. Based on a proper circuit design with suitable load line, the studied device has potential for tri-state logic applications..

Keywords

Thermionic emission, Hole confinement, Negative differential resistance (NDR), Triangular barrier (TB), Tri-state.

Citation

WEN-CHUNG CHANG, MING-JU YANG, KAO-FENG YARN, WIN-JET LUO, CHIH-YUNG WANG, Tri-state switching behavior in a GaAs/InGaAs barrier structure, Optoelectronics and Advanced Materials - Rapid Communications, 5, 11, November 2011, pp.1142-1145 (2011).

Submitted at: Oct. 15, 2011

Accepted at: Nov. 23, 2011