Abstract
Organometallic chemical vapour depostion (OMCVD) of copper compounds is the preferred method for metallization of
semiconductors over physical vapour deposition. The advantages of CVD are selectivity and ambient conditions for
deposition (low vacuum and room temperature). UPS spectra of Cu deposited from Cu(hfac)2 via chemical vapour
deposition onto Si(111)-7x7 were studied for apparent exposures of 0.02, 0.04, 0.06, 0.08, 0.1 L at room temperature. The
UPS spectra after each deposition showed a difference in the valence features for the Si in the range -2.5 to -15 eV,
suggesting that a transformation occurred from one deposition to another. The reduction in the peak intensity for Si(111)-
7x7 bulk states (-4 eV and -8 eV) as the deposition proceeds (exposures of 0.04 and 0.06 L), is accompanied by a
concomitant increase in the secondary electron peak (~ -17 eV) for the same exposures, suggesting that the sample is
receiving an increased amount of Cu (I) and fluorinated moities. Data are similar to those obtained by Tadayyon 11 for
organics. The difference in the intensity of the spectra between 0.08 L and 0.1 L suggested that the local density of states
around Si is affected by a continuous increase in the number of Cu atoms with the exposure..
Keywords
Chemical vapour deposition, Copper, Low index single crystal Si surfaces, Ultraviolet photoelectron spectroscopy.
Citation
C. IONESCU, M. A. IONESCU, I. CIUCA, Ultraviolet photoelectron spectroscopy (UPS) studies of initial stages of copper deposition from bis(hexafluoroacetylacetonato)copper(II) (Cu(hfac)2) on Si(111)-7x7 at room temperature. Part A, Optoelectronics and Advanced Materials - Rapid Communications, 5, 7, July 2011, pp.722-725 (2011).
Submitted at: June 22, 2011
Accepted at: July 25, 2011