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Uniform InAs Quantum dots on vicinal GaAs (1 00 ) substrate s by pulse d atomic layer epitaxy via metal organic chemical vapor deposition

MINGHUI SONG1, YANYAN FANG1,* , HUI XIONG1, ZHIHAO WU1, JIANGNAN DAI1, CHANGQING CHEN1

Affiliation

  1. Wuhan National Laboratory for Optoelectro nics College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract

InAs QDs were grown on vicinal GaAs (100) substrate via metal organic chemical vapor deposition. Several different methods were used to investigate the formation of InAs QDs, including conventional continue growth mode and pulsed atomic layer epitaxy (PALE) mode. When the continuous growth mode was used, a bimodal size distribution of QDs with small QDs and large islands is observ ed and the large InAs islands can be hardly suppressed . W hen the PALE mode was used, the results show that the InAs QDs with uniform size can be achieved and large InAs islands can be completely suppressed with optimized growth parameters ..

Keywords

InAs, Quantum dots, MO CUD, GaAs/100.

Citation

MINGHUI SONG, YANYAN FANG, HUI XIONG, ZHIHAO WU, JIANGNAN DAI, CHANGQING CHEN, Uniform InAs Quantum dots on vicinal GaAs (1 00 ) substrate s by pulse d atomic layer epitaxy via metal organic chemical vapor deposition, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.269-272 (2012).

Submitted at: Dec. 10, 2011

Accepted at: Feb. 20, 2012